philips semiconductors objective specification rectifier diode BY559-1500 fast, high-voltage features symbol quick reference data ? low forward volt drop v r = 1500 v ? low forward recovery voltage ? fast switching v f 1.2 v ? soft recovery characteristic ? high thermal cycling performance v fr 14 v ? low thermal resistance t fr 250 ns i f(av) = 10 a i fsm 100 a general description pinning sod59 (to220ac) glass-passivated double diffused pin description rectifier diode featuring fast forward recovery and low forward recovery 1 cathode voltage. the device is intended for use in multi-sync monitor horizontal 2 anode deflection circuits with maximum scan rates from 82 khz to 120 khz. tab cathode the by559 series is supplied in the conventional leaded sod59 (to220ac) package. limiting values limiting values in accordance with the absolute maximum system (iec 134). symbol parameter conditions min. max. unit v rrm peak repetitive reverse voltage - 1500 v v rwm crest working reverse voltage - 1300 v i fwm peak working forward current f = 120 khz; - 10 a i frm peak repetitive forward current t = 100 m s - 150 a i fsm peak non-repetitive forward t = 10 ms - 180 a current t = 8.3 ms - 200 a sinusoidal; t j = 150 ?c prior to surge; with reapplied v rwm(max) t stg storage temperature -40 150 ?c t j operating junction temperature - 150 ?c thermal resistances symbol parameter conditions min. typ. max. unit r th j-mb thermal resistance junction to - - 1.0 k/w mounting base r th j-a thermal resistance junction to in free air - 60 - k/w ambient k a 12 1 tab 2 september 1998 1 rev 1.100
philips semiconductors objective specification rectifier diode BY559-1500 fast, high-voltage static characteristics t j = 25 ?c unless otherwise stated symbol parameter conditions min. typ. max. unit v f forward voltage i f = 10 a - 1.0 1.25 v i f = 10 a; t j = 125 ?c - 0.79 0.9 v i r reverse current v r = v rwmmax - - 0.5 ma v r = v rwmmax ; t j = 125 ?c - - 2.0 ma dynamic characteristics t j = 25 ?c unless otherwise stated symbol parameter conditions min. typ. max. unit v fr forward recovery voltage i f = 10 a; di f /dt = 50 a/ m s-711v t fr forward recovery time i f = 10 a; di f /dt = 50 a/ m s; v f = 5 v - 250 350 ns i f = 10 a; di f /dt = 50 a/ m s; v f = 2 v - 450 600 ns t rr reverse recovery time i f = 1 a; -di f /dt = 50 a/ m s; v r 3 30 v - 0.75 1.0 m s q s reverse recovery charge i f = 2 a; -di f /dt = 20 a/ m s; v r 3 30 v - 4.0 5.0 m c september 1998 2 rev 1.100
philips semiconductors objective specification rectifier diode BY559-1500 fast, high-voltage fig.1. definition of vfr and tfr fig.2. definition of t rr and q s fig.3. basic horizontal deflection circuit. fig.4. typical and maximum forward characteristic i f = f(v f ); parameter t j fig.5. typical and maximum v fr = f(di f /dt); i f = 10 a; t j = 25?c fig.6. transient thermal impedance z th = f(t p ) time time v f v fr v f i f 10% 5v / 2v tfr 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 5 10 15 20 BY559-1500 vf / v if / a tj = 25 c tj = 125 c typ max 100% time di dt f i r i f trr 25% qs 0 50 100 150 200 250 0 5 10 15 20 25 BY559-1500 dif/dt (a/us) vfr / v typ max line output transformer vcc d1 ly cs cf deflection transistor 1us 10us 100us 1ms 10ms 100ms 1s 10s 0.001 0.01 0.1 1 10 by559 pulse width, tp (s) transient thermal impedance, zth j-mb (k/w) d = t p t p t t p t d september 1998 3 rev 1.100
philips semiconductors objective specification rectifier diode BY559-1500 fast, high-voltage mechanical data dimensions in mm net mass: 2 g fig.7. sod59 (to220ac). pin 1 connected to mounting base. notes 1. refer to mounting instructions for to220 envelopes. 2. epoxy meets ul94 v0 at 1/8". 10,3 max 3,7 2,8 3,0 3,0 max not tinned 1,3 max (2x) 2,4 0,6 4,5 max 5,9 min 15,8 max 1,3 0,9 max (2x) 13,5 min 5,08 12 september 1998 4 rev 1.100
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